An optimized method for TTSV placement with non-uniform heat sources in 3D-IC

In the past few years, thermal through silicon via (TTSV) has been experimentally investigated as an effective heat dissipation path. Although a lot of dissipation-related issues have solved in three-dimensional integrated circuit (3D-IC), there are neglections TTSV placement with non-uniform sources so far. this study, unique optimization is proposed to locate while effectively alleviating hot spots 3D-IC. The studied using finite element method. simulation results show that minimum temperature reduced by 2.1% compared peak single-layer chip, and 1.9% three-layer chip.